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Customized micro-nano optics

The customized micro-nano optics(CMN) center at SVG Optronics offers a full service from design and manufacturing up to the characterization of micro-nano optical elements for EUV to FIR applications and their processing and assembly in whole systems.
 
 
The CMN center either proceeds according to your design guidelines or creates a design for manufacturing your application.           

CMN center has cooperated with the key-lab of Soochow University  for the fabrication of  large aperture pulse compressed gratings,with NILT in Denmark for e-beam lithography of nano-structures.
 
 
 Technology   
   Resist technology 
 
   Lithographic structuring on the electron beam writer 
 
   Reactive ion beam etching of metals and inorganic materials 
 
   R2R embossing for micro-nano structure films
 
 

  deep groove embossing for micro-nano structures  
 
 
 
Technological environment 
 
   UV – Replication 
 
   R2R film embossing 
 
   Ultra diamond precision machining 
 
   Wafer scale integration 
 
   Micro assembly
 
   Coating technology 
 
 
 
Characterization
 
   Wave front detection        
 
   Microscopy (UV, SEM, AFM) 
 
  Tactile measurement  
 
   White-light interferometer
 
   Optical characterization 
 
 
 
 
 
 
Selected applications
 
       

 Outcoupling  films
 
        Beam splitter, beam shaper 
 
        photonic crystals 
 
        Pulse compression gratings 
 
        Polarizers 
 
        Brightness enhancement  
 
 
 
 
Substrates & materials Standard substrates 4“, 6“, 8“ and 12“
Fused silica and silicon (Special substrates ans materials on request) 
Critical dimension 65 nm 

writing grid 1 nm 
CD tolerance ± 10 nm 
Overlay ± 30 nm 
Etching aspect ratio ≤ 1 : 10 
Etching depth tolerance ± 10 nm 
 
Typical applications
 
  Diffractive and refractive lenses and lens arrays 
  Aspherical correction of spherical surfaces 
  Beam shaper 
  Regular and chirped lens arrays 
  gratings with high efficiency 
  CGHs 
 
Example of Application:Patterned microlens array for efficiency improvement of small-pixelated organic light-emitting devices leads to more than 20% efficiency increasing: 
 
 
 
 
Technical data  
 
 
 
 
 
Substrates & materials 
 
Standard substrates 4“, 6“, 8“ and 12“
Fused silica and silicon (Special substrates ans materials on request) 
 
 
Critical dimension 
 
65 nm 
 
 
writing grid 
 
1 nm 
 
 
CD tolerance 
 
± 10 nm  
 
 
Overlay 
 
± 30 nm 
 
 
Etching aspect ratio 
 
≤ 1 : 10 
 
 
Etching depth tolerance 
 
± 10 nm 
 
 
 
 
 
 
High precision microstructures on various substrates
 
 
 
  Processing of planar, spherical and aspherical substrates with sag heights of up to 30 mm 
 
  Generation of resist  structures for replication or proportional transfer by ion-beam etching or for the nickel preparation with electric-forming facilities.
 
   Continuous surface or step level profiles 
 
 
 
 
 
Technical data
 
 
 
basic system 
 
4A-LDW100, see the system 
 
 
laser 
 
Blue laser, λ = 405 nm 
 
 
max. writing field 
 
100 mm x 100 mm 
 
 
min. spot size 
 
~0.2μm 
 
 
auto-focus system 
 
0.3μm optical 
 
 
writing mode 
 
variable dose, max. 64 level 
 
 
spot positioning 
 
movement of substrate stage and grayscale 
 
 
substrate table 
 
x-y motion and cardanic mount (tilt in 2 orthogonal axis), polar coordinates 
 
 
min. radius of substrate curvature 
 
~10 mm 
 
 
max. surface tilt angle 
 
10° 
 
 
max. radius of substrate curvature
 
 
 
 
Tel:  +86-512-62588937,  +86-512-62589157   
Fax:  +86-512-62520928,  +86-512-62600602
email:  [email protected]  
 
 
 
SVG Optronics,Co., Ltd.
 
478 Zhongnan Street,  Suzhou Industrial Park(SIP)
 
Suzhou 215026, P.R. China 
 
~30 mm 
 
 
writing speed 
 
2-10 cm2/h (at highest resolution, depending on structure) 
 
position accuracy   ≤ 50 nm (planar substrates)
 
≤ 150 nm (curved substrates) 
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